RF2L16180CF2 - RF power LDMOS transistor

STMicroelectronics

RF2L16180CF2 Datasheet Preview — Preview of RF2L16180CF2 PDF

Datasheet Details

Part number	RF2L16180CF2
Manufacturer	STMicroelectronics ↗
File Size	494.30 KB
Description	RF power LDMOS transistor
Datasheet	RF2L16180CF2-STMicroelectronics.pdf

RF2L16180CF2 Product details

Description

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internal input matching for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

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Published: Mar 14, 2023 |