RF2L16180CF2

RF power LDMOS transistor

STMicroelectronics

RF2L16180CF2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internal input matching for ease of use

* Large positive and negative gate-source voltage r

RF2L16180CF2 General Description

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF2L16180CF2 Product.

RF2L16180CF2 Datasheet (494.30 KB)

RF2L16180CF2 Datasheet Preview — Preview of RF2L16180CF2 PDF

Datasheet Details

Part number:

RF2L16180CF2

Manufacturer:

STMicroelectronics ↗

File Size:

494.30 KB

Description:

Rf power ldmos transistor.
RF2L16180CF2 Datasheet 180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom s.

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RF2L16180CF2 power LDMOS transistor STMicroelectronics

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RF2L16180CF2 Features

RF2L16180CF2 General Description

Datasheet Details

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Description:

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