RF2L16180CF2 Datasheet - STMicroelectronics

RF2L16180CF2 RF power LDMOS transistor

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF2L16180CF2 Product.

RF2L16180CF2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internal input matching for ease of use

* Large positive and negative gate-source voltage r

RF2L16180CF2-STMicroelectronics.pdf