RF2L16180CF2 - RF power LDMOS transistor
The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz.
It can be used in class AB, B or C for all typical modulation formats.
Product status link RF2L16180CF2 Product
RF2L16180CF2 Features
* Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internal input matching for ease of use
* Large positive and negative gate-source voltage r
