RF2L15200CB4

RF power LDMOS transistor

STMicroelectronics

RF2L15200CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%

* High efficiency and linear gain operations

* Integrated ESD protection

* Large positive and negative gate-source voltage range for improved class C operation

* Exce

RF2L15200CB4 General Description

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF2L15200CB4 Product summary Order code RF2L15200CB4 Marking 2L15200 .

RF2L15200CB4 Datasheet (769.70 KB)

RF2L15200CB4 Datasheet Preview — Preview of RF2L15200CB4 PDF

Datasheet Details

Part number:

RF2L15200CB4

Manufacturer:

STMicroelectronics ↗

File Size:

769.70 KB

Description:

Rf power ldmos transistor.
RF2L15200CB4 Datasheet 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain .

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RF2L15200CB4 power LDMOS transistor STMicroelectronics

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RF2L15200CB4 Features

RF2L15200CB4 General Description

Datasheet Details

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Description:

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