RF2L15200CB4 Datasheet - STMicroelectronics

RF2L15200CB4 RF power LDMOS transistor

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF2L15200CB4 Product summary Order code RF2L15200CB4 Marking 2L15200 .

RF2L15200CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%

* High efficiency and linear gain operations

* Integrated ESD protection

* Large positive and negative gate-source voltage range for improved class C operation

* Exce

RF2L15200CB4-STMicroelectronics.pdf