RF2L15200CB4 - RF power LDMOS transistor

STMicroelectronics

Datasheet Details

Part number	RF2L15200CB4
Manufacturer	STMicroelectronics ↗
File Size	769.70 KB
Description	RF power LDMOS transistor
Datasheet	RF2L15200CB4-STMicroelectronics.pdf

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz.

Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%.
High efficiency and linear gain operations.
Integrated ESD protection.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

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Published: Mar 19, 2023 |