RF2L15200CB4 - RF power LDMOS transistor
The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz.
It can be used in class AB, B or C for all typical modulation formats.
Product status link RF2L15200CB4 Product summary Order code RF2L15200CB4 Marking 2L15200
RF2L15200CB4 Features
* Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* Exce
