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LET21030C - RF POWER TRANSISTORS Ldmos Enhanced Technology

General Description

The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz.

The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V.

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LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION CASE 465E–03, STYLE 1 epoxy sealed ORDER CODE LET21030C BRANDING LET21030C DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3.