rf power transistors ldmos enhanced technology.
* EXCELLENT THERMAL STABILITY
* POUT = 30 W with 11 dB gain @ 2170 MHz
* BeO FREE PACKAGE
* INTERNAL IN.
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband per.
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