LET20030S package equivalent, rf power transistors ldmos enhanced technology in plastic package.
* EXCELLENT THERMAL STABILITY
* COMMON SOURCE CONFIGURATION
* POUT = 30 W with 11 dB gain @ 2000 MHz
* E.
The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 G.
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