LET9060 transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration
* POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V
* New RF plastic package
Description
The LET9.
It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity a.
The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz..
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