LET9060C transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration
* POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
* POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MH.
at frequencies up to 1.0 GHz. The LET9060C is designed for high gain and broadband performance operating in common sourc.
The LET9060C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060C is designed for high gain and broadband perfo.
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