LET9085 Datasheet | STMicroelectronics

DESCRIPTION The LET9085 is a mon source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in mon source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W °C °C -0.5 to +15 12 186 200 -65 to +150 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 °C/W January, 28 2003 1/4 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS- COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 10 µA VDS = 26 V VDS = 65 V VDS = 0 V ID = TBD ID = 2 A ID = 6 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.9 TBD 0.19 8 TBD 75 0.4 Test Conditions Min. 65 1 10 1 Typ. Max. Unit V µA µA µA V V mho p F p F p F - Includes Internal Input Moscap. DYNAMIC (f = 865 - 895 MHz ) Symbol P1d B ηD GP IMD3 Load mismatch POUT (CDMA)(1) ηD (CDMA)(1) (1) IS-95 CDMA Test Conditions VDD = 26 V VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD IDQ = TBD POUT = 90 W POUT = 90 W PEP POUT = 90 W PEP POUT = 90 W Min. 90 50 17 Typ. 105 55 Max. Unit W % d B -31 -28 10:1 d Bc VSWR W % VDD = 26 V IDQ = TBD ALL PHASE ANGLES 750 KHz ACPR: -45d Bc 1.98 MHz ACPR: -60d Bc 750 KHz ACPR: -45d Bc 1.98 MHz ACPR: -60d Bc 20 28 Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 DYNAMIC (f = 920 - 960 MHz) P1d B GP ηD Load mismatch POUT(EDGE) ηD(EDGE) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 70 W POUT = 70...