LET9085 - RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
General Description
The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V.
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LET9085
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % • EDGE PERFORMANCES POUT = 35 W EFF. = 35 % • GSM PERFORMANCES POUT = 75 W EFF. = 55 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION PIN CONNECTION
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M265 epoxy sealed ORDER CODE LET9085 BRANDING LET9085
DESCRIPTION The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V.
LET9085 Datasheet
