LET9002 package equivalent, rf power transistors ldmos enhanced technology in plastic package.
at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common sourc.
The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband perfo.
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