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M58LT128HSB - (M58LT128HSB / M58LT128HST) Flash memories

Description

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Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 2.7 V to 3.6 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 52 MHz.
  • Asynchronous Page Read mode.
  • Random Access: 85 ns Synchronous Burst Read Suspend Programming time.
  • 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple Bank memory.

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www.DataSheet4U.com M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Asynchronous Page Read mode – Random Access: 85 ns Synchronous Burst Read Suspend Programming time – 2.
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