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M58LT128HST - (M58LT128HSB / M58LT128HST) Flash memories

Download the M58LT128HST datasheet PDF. This datasheet also covers the M58LT128HSB variant, as both devices belong to the same (m58lt128hsb / m58lt128hst) flash memories family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 2.7 V to 3.6 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 52 MHz.
  • Asynchronous Page Read mode.
  • Random Access: 85 ns Synchronous Burst Read Suspend Programming time.
  • 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple Bank memory.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M58LT128HSB_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
M58LT128HSB (M58LT128HSB / M58LT128HST) Flash memories
M58LT128GSB (M58LT128GSB / M58LT128GST) Flash Memories
M58LT128GST (M58LT128GSB / M58LT128GST) Flash Memories
M58LT256JSB (M58LT256JSB / M58LT256JST) Flash memories
M58LR128GB 128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Asynchronous Page Read mode – Random Access: 85 ns Synchronous Burst Read Suspend Programming time – 2.