M58LT128GST Datasheet | STMicroelectronics

Features Summary - SUPPLY VOLTAGE - VDD = 1.7 to 2.0V for program, erase and read - VDDQ = 2.7 to 3.6V for I/O Buffers - VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ - Random Access: 110ns - Asynchronous Page Read: 25ns. - Synchronous Burst Read: 52MHz SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME - 10µs typical Word program time using Buffer Enhanced Factory Program mand MEMORY ORGANIZATION - Multiple Bank Memory Array: 8 Mbit Banks - Parameter Blocks (Top or Bottom location) DUAL OPERATIONS - program/erase in one Bank while read in others - No delay between read and write operations HARDWARE PROTECTION - All Blocks Write Protected when VPP≤ VPPLK SECURITY - Software Security Features - 64-bit Unique Device Identifier - 2112 bits of User-Programmable OTP memory MON FLASH INTERFACE (CFI) - BGA - TBGA64 (ZA) 10 x 13mm - - 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code: M58LT128GST: 88C6h M58LT128GSB: 88C7h ECOPACK® PACKAGE AVAILABLE - - - - - - - September 2005 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Rev 1.0 1/98 .st. 1 .. M58LT128GST, M58LT128GSB Contents 1 2 Summary description - - - - - - - - . . 8 Signal descriptions -...