M58LT128GST Overview
13 Data Input/Output (DQ0-DQ15) . 14 2.10.1 VDDQ Supply Voltage . 14 VPP Program Supply Voltage.
M58LT128GST Key Features
- SUPPLY VOLTAGE
- VDD = 1.7 to 2.0V for program, erase and read
- VDDQ = 2.7 to 3.6V for I/O Buffers
- VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ
- Random Access: 110ns
- Asynchronous Page Read: 25ns
- Synchronous Burst Read: 52MHz SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME
- 10µs typical Word program time using Buffer Enhanced Factory Program mand MEMORY ORGANIZATION
- Multiple Bank Memory Array: 8 Mbit Banks
- Parameter Blocks (Top or Bottom location) DUAL OPERATIONS