STMicroelectronics M58LT128GST
This is preliminary information on a new product now in development or undergoing evaluation.| Part No. | M58LT128GST |
|---|---|
| Datasheet | M58LT128GST Download |
| Manufacturer |  STMicroelectronics |
| Description | Flash Memories |
| Buy | Stock & Price |
FEATURES
Summary● SUPPLY VOLTAGE – VDD = 1.7 to 2.0V for program, erase and read – VDDQ = 2.7 to 3.6V for I/O Buffers – VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ – Random Access: 110ns – Asynchronous Page Read: 25ns. – Synchronous Burst Read: 52MHz SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations HARDWARE PROTECTION – All Blocks Write Protected when VPP≤ VPPLK SECURITY – Software Security
FEATURES
– 64-bit Unique Device Identifier – 2112 bits of User-Programmable OTP memory COMMON FLASH INTERFACE (CFI)● BGA
● TBGA64 (ZA) 10 x 13mm
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● 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: M58LT128GST: 88C6h M58LT128GSB: 88C7h ECOPACK® PACKAGE AVAILABLE
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● September 2005 Details are subject to change without notice.
