STMicroelectronics M58LT128HSB
Flash memories
| Part No. | M58LT128HSB |
|---|---|
| Datasheet | M58LT128HSB Download |
| Manufacturer |  STMicroelectronics |
| Description | Flash memories |
| Buy | Stock & Price |
FEATURES
● Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Asynchronous Page Read mode – Random Access: 85 ns Synchronous Burst Read Suspend Programming time – 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 8-Mbit Banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Block protection – All blocks protected at power-up – Any combination of blocks can be protected with zero latency – Absolute Write Protection with VPP = VSS Security – Software security features – 64-bit unique device number – 2112-bit user programmable OTP Cells Common Flash Interface (CFI) 100 000 program/erase cycles per block●
● BGA
● TBGA64 (ZA) 10 × 13 mm
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● Electronic si...
