M58LT128HSB Datasheet | STMicroelectronics

Features - Supply voltage - VDD = 1.7 V to 2.0 V for program, erase and read - VDDQ = 2.7 V to 3.6 V for I/O buffers - VPP = 9 V for fast program Synchronous / Asynchronous Read - Synchronous Burst Read mode: 52 MHz - Asynchronous Page Read mode - Random Access: 85 ns Synchronous Burst Read Suspend Programming time - 2.5 µs typical Word program time using Buffer Enhanced Factory Program mand Memory organization - Multiple Bank memory array: 8-Mbit Banks - Parameter Blocks (top or bottom location) Dual operations - program/erase in one Bank while read in others - No delay between read and write operations Block protection - All blocks protected at power-up - Any bination of blocks can be protected with zero latency - Absolute Write Protection with VPP = VSS Security - Software security features - 64-bit unique device number - 2112-bit user programmable OTP Cells mon Flash Interface (CFI) 100 000 program/erase cycles per block - - - TBGA64 (ZA) 10 × 13 mm - - - Electronic signature - Manufacturer code: 20h - Top device codes: M58LT128HST: 88D6h - Bottom device codes M58LT128HSB: 88D7h TBGA64 package - ECOPACK® pliant - - - - - March 2007 Rev 1 1/110 .st. 1 .. Contents M58LT128HST, M58LT128HSB Contents 1 2 Description -...