Datasheet4U Logo Datasheet4U.com

M58LT128HSB - (M58LT128HSB / M58LT128HST) Flash memories

General Description

.

.

.

.

Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 2.7 V to 3.6 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 52 MHz.
  • Asynchronous Page Read mode.
  • Random Access: 85 ns Synchronous Burst Read Suspend Programming time.
  • 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple Bank memory.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M58LR128FB Flash Memory ST Microelectronics
M58LR128FT Flash Memory ST Microelectronics
M58LR128HB (M58LR128Hx) Flash memories ST Microelectronics
M58LR128HT (M58LR128Hx) Flash memories ST Microelectronics
M58LR128KB (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories Numonyx

Other Datasheets by STMicroelectronics

Part Number Description
M58LT128HST (M58LT128HSB / M58LT128HST) Flash memories
M58LT128GSB (M58LT128GSB / M58LT128GST) Flash Memories
M58LT128GST (M58LT128GSB / M58LT128GST) Flash Memories
M58LT256JSB (M58LT256JSB / M58LT256JST) Flash memories
M58LR128GB 128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Asynchronous Page Read mode – Random Access: 85 ns Synchronous Burst Read Suspend Programming time – 2.