M58LT128HSB Description
12 Data inputs/outputs (DQ0-DQ15) . 13 VPP program supply voltage.
M58LT128HSB Key Features
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 2.7 V to 3.6 V for I/O buffers
- VPP = 9 V for fast program Synchronous / Asynchronous Read
- Synchronous Burst Read mode: 52 MHz
- Asynchronous Page Read mode
- Random Access: 85 ns Synchronous Burst Read Suspend Programming time
- 2.5 µs typical Word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple Bank memory array: 8-Mbit Banks
- Parameter Blocks (top or bottom location) Dual operations
- program/erase in one Bank while read in others