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M58LT256JSB - (M58LT256JSB / M58LT256JST) Flash memories

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 2.7 V to 3.6 V for I/O Buffers.
  • VPP = 9 V for fast program Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 52 MHz.
  • Random access: 85 ns.
  • Asynchronous Page Read mode Synchronous Burst Read Suspend Programming time.
  • 5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple Bank memory a.

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www.DataSheet4U.com M58LT256JST M58LT256JSB 256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.