M58LT256JSB Description
12 Data input/output (DQ0-DQ15) . 13 VPP Program supply voltage.
M58LT256JSB Key Features
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 2.7 V to 3.6 V for I/O Buffers
- VPP = 9 V for fast program Synchronous / Asynchronous Read
- Synchronous Burst Read mode: 52 MHz
- Random access: 85 ns
- Asynchronous Page Read mode Synchronous Burst Read Suspend Programming time
- 5 µs typical Word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple Bank memory array: 16 Mbit banks
- Parameter Blocks (top or bottom location) Dual operations
- program/erase in one Bank while read in others