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M58LT128HST Datasheet (M58LT128HSB / M58LT128HST) Flash memories

Manufacturer: STMicroelectronics

Download the M58LT128HST datasheet PDF. This datasheet also includes the M58LT128HSB variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M58LT128HSB_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

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Overview

www.DataSheet4U.com M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.

Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 2.7 V to 3.6 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 52 MHz.
  • Asynchronous Page Read mode.
  • Random Access: 85 ns Synchronous Burst Read Suspend Programming time.
  • 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple Bank memory.

More Datasheets from STMicroelectronics

Part Number Description
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M58LT128GST (M58LT128GSB / M58LT128GST) Flash Memories
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M58LR128GL 128 and 256Mbit 1.8V supply Flash memories
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M58LR256GU 128 and 256Mbit 1.8V supply Flash memories