M58LT256JSB - (M58LT256JSB / M58LT256JST) Flash memories

STMicroelectronics

Datasheet Details

Part number	M58LT256JSB
Manufacturer	STMicroelectronics
File Size	930.29 KB
Description	(M58LT256JSB / M58LT256JST) Flash memories
Datasheet	M58LT256JSB_STMicroelectronics.pdf

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Supply voltage.
VDD = 1.7 V to 2.0 V for program, erase and read.
VDDQ = 2.7 V to 3.6 V for I/O Buffers.
VPP = 9 V for fast program Synchronous / Asynchronous Read.
Synchronous Burst Read mode: 52 MHz.
Random access: 85 ns.
Asynchronous Page Read mode Synchronous Burst Read Suspend Programming time.
5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization.
Multiple Bank memory a.

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Published: Oct 31, 2007 |