Datasheet Summary
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
Product status link MASTERGAN1
Product label
Features
- 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
- QFN 9 x 9 x 1 mm package
- RDS(ON) = 150 mΩ
- IDS(MAX) = 10 A
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on low-side and high-side
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3 V to 15 V patible inputs with hysteresis and pull-down
- Overtemperature protection
- Bill of material reduction
- Very pact and...