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MASTERGAN1 Datasheet High Power Density 600v Half Bridge Driver

Manufacturer: STMicroelectronics

Overview: MASTERGAN1 Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN1 Product.

General Description

The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN1

Key Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 150 mΩ.
  • IDS(MAX) = 10 A.
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shutdown functionality.
  • Accurate internal timing match.
  • 3.3 V t.

More Datasheets from STMicroelectronics

Part Number Description
MASTERGAN2 High power density 600V Half bridge driver
MASTERGAN3 High power density 600V Half bridge driver
MASTERGAN4 High power density 600V half-bridge driver
MASTERGAN5 High power density 600V half-bridge driver

MASTERGAN1 Distributor