Datasheet4U Logo Datasheet4U.com

MASTERGAN2 - High power density 600V Half bridge driver

Datasheet Summary

Description

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.

Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS).
  • IDS(MAX) = 10 A (LS) + 6.5 A (HS).
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shutdown funct.

📥 Download Datasheet

Datasheet preview – MASTERGAN2

Datasheet Details

Part number MASTERGAN2
Manufacturer STMicroelectronics
File Size 675.77 KB
Description High power density 600V Half bridge driver
Datasheet download datasheet MASTERGAN2 Datasheet
Additional preview pages of the MASTERGAN2 datasheet.

📁 Similar Datasheet

  • MAS1008 - MAS1008 (Tesla)
  • MAS1016 - am Receiver (Micro Analog Systems)
  • MAS1016B - am Receiver (Micro Analog Systems)
  • MAS1017 - am Receiver (Micro Analog Systems)
  • MAS110S - Fast Turn-off Asymmetric Thyristor/Diode Module (Dynex)
  • MAS1175 - IC FOR 10.00 - 20.00 MHz VCTCXO (Micro Analog systems)
  • MAS1178 - IC FOR 10.00 - 20.00 MHz VCXO (Micro Analog systems)
  • MAS1206 - Equipment Designed to Conform EMI Regulations Such As VCCI /CISPR /FCC /VDE /etc (DENSEI-LAMBDA)
  • MAS1206-33 - Equipment Designed to Conform EMI Regulations Such As VCCI /CISPR /FCC /VDE /etc (DENSEI-LAMBDA)
  • MAS1210-33 - Equipment Designed to Conform EMI Regulations Such As VCCI /CISPR /FCC /VDE /etc (DENSEI-LAMBDA)
Other Datasheets by STMicroelectronics
  • MASTERGAN1 - High power density 600V Half bridge driver
  • MASTERGAN3 - High power density 600V Half bridge driver
  • MASTERGAN4 - High power density 600V half-bridge driver
  • MASTERGAN5 - High power density 600V half-bridge driver

Full PDF Text Transcription

Click to expand full text
MASTERGAN2 Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN2 Product label Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS) – IDS(MAX) = 10 A (LS) + 6.5 A (HS) • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shutdown functionality • Accurate internal timing match • 3.
Published: |