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MASTERGAN3 - High power density 600V Half bridge driver

General Description

The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.

Key Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS).
  • IDS(MAX) = 6.5 A (LS) + 4 A (HS).
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shutdown functi.

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Other Datasheets by STMicroelectronics

Part Number Description
MASTERGAN1 High power density 600V Half bridge driver
MASTERGAN2 High power density 600V Half bridge driver
MASTERGAN4 High power density 600V half-bridge driver
MASTERGAN5 High power density 600V half-bridge driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MASTERGAN3 Datasheet High power density 600 V Half bridge driver with two enhancement mode GaNHEMT Product status link MASTERGAN3 Product label Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS) – IDS(MAX) = 6.5 A (LS) + 4 A (HS) • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shutdown functionality • Accurate internal timing match • 3.