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MASTERGAN3 - High power density 600V Half bridge driver

Datasheet Summary

Description

The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.

Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS).
  • IDS(MAX) = 6.5 A (LS) + 4 A (HS).
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shutdown functi.

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Datasheet preview – MASTERGAN3

Datasheet Details

Part number MASTERGAN3
Manufacturer STMicroelectronics
File Size 610.81 KB
Description High power density 600V Half bridge driver
Datasheet download datasheet MASTERGAN3 Datasheet
Additional preview pages of the MASTERGAN3 datasheet.

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Full PDF Text Transcription

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MASTERGAN3 Datasheet High power density 600 V Half bridge driver with two enhancement mode GaNHEMT Product status link MASTERGAN3 Product label Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS) – IDS(MAX) = 6.5 A (LS) + 4 A (HS) • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shutdown functionality • Accurate internal timing match • 3.
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