MASTERGAN3 Overview
The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 225 mΩ and 450 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while...
MASTERGAN3 Key Features
- 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical confi
- QFN 9 x 9 x 1 mm package
- RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS)
- IDS(MAX) = 6.5 A (LS) + 4 A (HS)
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on low-side and high-side
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shutdown functionality