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MASTERGAN1 - High power density 600V Half bridge driver

Datasheet Summary

Description

The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 150 mΩ.
  • IDS(MAX) = 10 A.
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shutdown functionality.
  • Accurate internal timing match.
  • 3.3 V t.

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Datasheet preview – MASTERGAN1

Datasheet Details

Part number MASTERGAN1
Manufacturer STMicroelectronics
File Size 524.93 KB
Description High power density 600V Half bridge driver
Datasheet download datasheet MASTERGAN1 Datasheet
Additional preview pages of the MASTERGAN1 datasheet.

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Full PDF Text Transcription

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MASTERGAN1 Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN1 Product label Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shutdown functionality • Accurate internal timing match • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Overtemperature protection • Bill of material reduction • Very compact and simplified layout • Flexible, easy and fast design.
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