MASTERGAN1 Description
The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
MASTERGAN1 Key Features
- 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors
- QFN 9 x 9 x 1 mm package
- RDS(ON) = 150 mΩ
- IDS(MAX) = 10 A
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on low-side and high-side
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shutdown functionality