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MASTERGAN4 - High power density 600V half-bridge driver

Datasheet Summary

Description

The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration.

Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 225 mΩ.
  • IDS(MAX) = 6.5 A.
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shut down functionality.
  • Accurate internal timing match.
  • 3.3 V.

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Datasheet preview – MASTERGAN4

Datasheet Details

Part number MASTERGAN4
Manufacturer STMicroelectronics
File Size 468.83 KB
Description High power density 600V half-bridge driver
Datasheet download datasheet MASTERGAN4 Datasheet
Additional preview pages of the MASTERGAN4 datasheet.

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Other Datasheets by STMicroelectronics
  • MASTERGAN1 - High power density 600V Half bridge driver
  • MASTERGAN2 - High power density 600V Half bridge driver
  • MASTERGAN3 - High power density 600V Half bridge driver
  • MASTERGAN5 - High power density 600V half-bridge driver

Full PDF Text Transcription

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MASTERGAN4 Datasheet High power density 600V half-bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN4 Product label Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shut down functionality • Accurate internal timing match • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Over temperature protection • Bill of material reduction • Very compact and simplified layout • Flexible, easy and fast design.
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