MASTERGAN5 Datasheet | STMicroelectronics

Features - 600 V system-in-package integrating half-bridge gate driver and high-voltage Ga N power transistors: - QFN 9 x 9 x 1 mm package - RDS(ON) = 450 mΩ - IDS(MAX) = 4 A - Reverse current capability - Zero reverse recovery loss - UVLO protection on low-side and high-side - Internal bootstrap diode - Interlocking function - Dedicated pin for shut down functionality - Accurate internal timing match - 3.3 V to 15 V patible inputs with hysteresis and pull-down - Over temperature protection - Bill of material reduction - Very pact and simplified layout - Flexible, easy and fast design. Applications Switch-mode power supplies Chargers and adapters High-voltage PFC, DC-DC and DC-AC Converters Description The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode Ga N power transistors in half bridge configuration. The integrated power Ga Ns have 650 V drain-source blocking voltage and RDS(ON) of 450 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN5 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The extended range of the input pins allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN5 operates in the industrial temperature range, -40°C to 125°C. The device is available in a pact 9x9 mm QFN package. DS13775 - Rev 1 - July 2021 For further information contact your local STMicroelectronics sales office. .st. Block diagram Figure 1. Block diagram Block diagram VCC UVLO HIN LIN...