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MASTERGAN5 - High power density 600V half-bridge driver

General Description

The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration.

Key Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 450 mΩ.
  • IDS(MAX) = 4 A.
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shut down functionality.
  • Accurate internal timing match.
  • 3.3 V t.

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Other Datasheets by STMicroelectronics

Part Number Description
MASTERGAN1 High power density 600V Half bridge driver
MASTERGAN2 High power density 600V Half bridge driver
MASTERGAN3 High power density 600V Half bridge driver
MASTERGAN4 High power density 600V half-bridge driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MASTERGAN5 Datasheet High power density 600 V half-bridge driver with two enhancement mode GaNHEMT Product status link MASTERGAN5 Product label Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 450 mΩ – IDS(MAX) = 4 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shut down functionality • Accurate internal timing match • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Over temperature protection • Bill of material reduction • Very compact and simplified layout • Flexible, easy and fast design.