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MASTERGAN2 Datasheet High Power Density 600v Half Bridge Driver

Manufacturer: STMicroelectronics

Overview: MASTERGAN2 Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN2 Product.

General Description

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.

The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN2

Key Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS).
  • IDS(MAX) = 10 A (LS) + 6.5 A (HS).
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shutdown funct.

More Datasheets from STMicroelectronics

Part Number Description
MASTERGAN1 High power density 600V Half bridge driver
MASTERGAN3 High power density 600V Half bridge driver
MASTERGAN4 High power density 600V half-bridge driver
MASTERGAN5 High power density 600V half-bridge driver

MASTERGAN2 Distributor