MASTERGAN3 Key Features
- 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical confi
- QFN 9 x 9 x 1 mm package
- RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS)
- IDS(MAX) = 6.5 A (LS) + 4 A (HS)
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on low-side and high-side
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shutdown functionality