MASTERGAN3 Datasheet PDF

STMicroelectronics MASTERGAN3

The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 225 mΩ and 450 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN3 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.