Datasheet4U Logo Datasheet4U.com

MASTERGAN4 Datasheet High Power Density 600v Half-bridge Driver

Manufacturer: STMicroelectronics

Overview: MASTERGAN4 Datasheet High power density 600V half-bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN4 Product.

General Description

The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration.

The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN4

Key Features

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:.
  • QFN 9 x 9 x 1 mm package.
  • RDS(ON) = 225 mΩ.
  • IDS(MAX) = 6.5 A.
  • Reverse current capability.
  • Zero reverse recovery loss.
  • UVLO protection on low-side and high-side.
  • Internal bootstrap diode.
  • Interlocking function.
  • Dedicated pin for shut down functionality.
  • Accurate internal timing match.
  • 3.3 V.

More Datasheets from STMicroelectronics

Part Number Description
MASTERGAN1 High power density 600V Half bridge driver
MASTERGAN2 High power density 600V Half bridge driver
MASTERGAN3 High power density 600V Half bridge driver
MASTERGAN5 High power density 600V half-bridge driver

MASTERGAN4 Distributor