MJD2955 Datasheet - ST Microelectronics

Complementary Silicon Power Transistors

MJD2955 General Description

The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-.

MJD2955 Datasheet (186.35 KB)

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MJD2955

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STMicroelectronics ↗

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186.35 KB

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Complementary silicon power transistors.
MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE &.

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MJD2955 Complementary Silicon Power Transistors ST Microelectronics

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MJD2955 General Description

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