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MSC82306 Datasheet

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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MSC82306
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. REFRACTORY\GOLD METALLIZATION
. VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC® PACKAGE
. POUT = 5.5 W MIN. WITH 9.6 dB GAIN
PRELIMINARY DATA
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82306
B RA ND IN G
82306
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DESCRIPTION
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC 50°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Value
16.7
900
26
200
65 to +200
Unit
W
mA
V
°C
°C
9.0 °C/W
1/4


STMicroelectronics Electronic Components Datasheet

MSC82306 Datasheet

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

No Preview Available !

MSC82306
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVEBO
BVCER
ICBO
hFE
IC = 1mA
IE = 1mA
IC = 5mA
VCB = 22V
VCE = 5V
IE = 0mA
IC = 0mA
RBE = 10
IC = 400mA
DYNAMIC
S ymb o l
POUT
ηc
GP
COB
f = 2.3 GHz
f = 2.3 GHz
f = 2.3 GHz
f = 1 MHz
Test Conditions
PIN = 0.6 W
PIN = 0.6 W
PIN = 0.6 W
VCB = 22 V
VCC = 22 V
VCC = 22 V
VCC = 22 V
Min.
44
3.5
44
30
Va l u e
Typ. Max.
——
——
——
— 0.5
— 300
Unit
V
V
V
mA
Value
Min. Typ. Max.
5.5 6.3 —
40 45 —
9.6 10.2 —
— — 7.0
Unit
W
%
dB
pF
2/4


Part Number MSC82306
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Maker STMicroelectronics
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MSC82306 Datasheet PDF






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