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MSC82307 - RF & MICROWAVE TRANSISTORS

Description

The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry.

This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.

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Full PDF Text Transcription

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MSC82307 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 7.0 W MIN. WITH 9.6 dB GAIN .250 2LFL (S010) hermetically sealed ORDER CODE MSC82307 BRANDING 82307 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4.
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