Datasheet Details
| Part number | P4NA60FI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 235.84 KB |
| Description | STP4NA60FI |
| Datasheet |
 P4NA60FI Datasheet
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| Part number | P4NA60FI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 235.84 KB |
| Description | STP4NA60FI |
| Datasheet |
P4NA60FI Datasheet
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This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP4NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
www.DataSheet4U.com STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 STP4NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 2.2 Ω < 2.2 Ω ID 4.3 A 2.7 A TYPICAL RDS(on) = 1.
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| P4NK50Z | STP4NK50Z |
| P4NK60Z | STP4NK60Z |
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