PD55025S-E Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 12 V in mon source mode at frequencies up to 1 GHz.
PD55025S-E Key Features
- Excellent thermal stability
- mon source configuration
- POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V
- New RF plastic package