PD55035STR1-E Datasheet - STMicroelectronics

RF power LDMOS transistor

PD55035STR1-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

PD55035STR1-E Datasheet (326.27 KB)

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PD55035STR1-E

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STMicroelectronics ↗

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326.27 KB

Description:

Rf power ldmos transistor.
PD55035STR1-E Datasheet 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin connection Pin Connection 1.

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PD55035STR1-E General Description

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