Datasheet4U.com

PD55035STR1-E - RF power LDMOS transistor

Product Overview

STMicroelectronics

📥 Download Datasheet

PD55035STR1-E RF power LDMOS transistor by STMicroelectronics - Datasheet Preview — Datasheet preview – PD55035STR1-E

Datasheet Details

Part number	PD55035STR1-E
Manufacturer	STMicroelectronics
File Size	326.27 KB
Description	RF power LDMOS transistor
Datasheet	PD55035STR1-E Datasheet
Additional preview pages of the PD55035STR1-E datasheet.

Product details

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

Features

Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V.
Excellent thermal stability.
Common source configuration.
POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V.
New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62%.

📁 Similar Datasheet

PD551BA - P-Channel MOSFET (UNIKC)
PD55FG120 - THYRISTOR MODULE (ETC)
PD55FG160 - THYRISTOR MODULE (ETC)
PD55FG40 - THYRISTOR MODULE (ETC)
PD55FG80 - THYRISTOR MODULE (ETC)
PD5036 - Telephone Ring Generator Controller (PowerDsine)
PD504BA - N-Channel MOSFET (UNIKC)
PD506BA - N-Channel MOSFET (UNIKC)

Other Datasheets by STMicroelectronics

PD55035S-E - RF POWER transistor
PD55035-E - RF POWER transistor
PD55003 - RF POWER TRANSISTORS
PD55003-E - RF POWER transistor
PD55003L-E - RF POWER transistor
PD55003S - RF POWER TRANSISTORS

Published: Mar 5, 2023 |