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PD57018-E Datasheet, STMicroelectronics

PD57018-E Datasheet, STMicroelectronics

PD57018-E

datasheet Download (Size : 911.62KB)

PD57018-E Datasheet

PD57018-E transistor

rf power transistor.

rf power transistor.

PD57018-E

datasheet Download (Size : 911.62KB)

PD57018-E Datasheet

PD57018-E Features and benefits

PD57018-E Features and benefits


* Excellent thermal stability
* Common source configuration
* POUT = 18 W with 16.5dB gain@945 MHz/28 V
* New RF plastic package Description The device is.

PD57018-E Application

PD57018-E Application

It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

PD57018-E Description

PD57018-E Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 G.

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TAGS

PD57018-E
POWER
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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