Datasheet4U Logo Datasheet4U.com

PD57002-E RF POWER transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet * production data .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial ap.

📥 Download Datasheet

Preview of PD57002-E PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* Excellent thermal stability
* Common source configuration
* POUT = 2 W with 15dB gain @ 960 MHz / 28 V

Applications

* at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC ap

PD57002-E Distributors

📁 Related Datasheet

PD570BA PD5710 PD5715 PD5720 PD5730 PD5036

📌 All Tags

PD57002-E POWER transistor STMicroelectronics
STMicroelectronics PD57002-E-like datasheet
PD57006-E
PD57006S-E
PD57018
PD57018-E
PD57018S