PD57006S-E, PD57006-E RF POWER transistor

STMicroelectronics

Description

PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

📥 Download Datasheet

PD57006S-E Datasheet Preview — This datasheet PDF includes multiple part numbers: PD57006S-E, PD57006-E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PD57006S-E, PD57006-E
Manufacturer: STMicroelectronics ↗
File Size: 495.07 KB
Datasheet: PD57006-E-STMicroelectronics.pdf
Description: RF POWER transistor
Note: This datasheet PDF includes multiple part numbers: PD57006S-E, PD57006-E.
Please refer to the document for exact specifications by model.

Features

* Excellent thermal stability
* Common source configuration
* POUT = 6 W with 15dB gain @ 945 MHz / 28 V

Applications

* It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal so

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PD57006-E POWER transistor STMicroelectronics

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