PD57006S-E

RF POWER transistor

STMicroelectronics

PD57006S-E Features

* Excellent thermal stability

* Common source configuration

* POUT = 6 W with 15dB gain @ 945 MHz / 28 V

* New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band c

PD57006S-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

PD57006S-E Datasheet (495.07 KB)