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PD57006-E

RF POWER transistor

PD57006-E Features

* Excellent thermal stability

* Common source configuration

* POUT = 6 W with 15dB gain @ 945 MHz / 28 V

* New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band c

PD57006-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

PD57006-E Datasheet (495.07 KB)

Preview of PD57006-E PDF

Datasheet Details

Part number:

PD57006-E

Manufacturer:

STMicroelectronics ↗

File Size:

495.07 KB

Description:

Rf power transistor.

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PD57006-E POWER transistor STMicroelectronics

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