Datasheet Details
- Part number
- PD57006-E
- Manufacturer
- STMicroelectronics ↗
- File Size
- 495.07 KB
- Datasheet
- PD57006-E-STMicroelectronics.pdf
- Description
- RF POWER transistor
PD57006-E Description
PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
PD57006-E Features
* Excellent thermal stability
* Common source configuration
* POUT = 6 W with 15dB gain @ 945 MHz / 28 V
PD57006-E Applications
* It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal so
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