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PD57006-E Datasheet - STMicroelectronics

PD57006-E - RF POWER transistor

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

The device boasts the excellent gain, linearit

PD57006-E-STMicroelectronics.pdf

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Datasheet Details

Part number:

PD57006-E

Manufacturer:

STMicroelectronics ↗

File Size:

495.07 KB

Description:

Rf power transistor.

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