PD57006-E Datasheet - STMicroelectronics

PD57006-E, RF POWER transistor

PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

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PD57006-E-STMicroelectronics.pdf

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Datasheet Details

Part number:

PD57006-E

Manufacturer:

STMicroelectronics ↗

File Size:

495.07 KB

Description:

RF POWER transistor

Features

* Excellent thermal stability
* Common source configuration
* POUT = 6 W with 15dB gain @ 945 MHz / 28 V

Applications

* It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal so

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