PD57018-E

RF POWER transistor

STMicroelectronics

PD57018-E Features

* Excellent thermal stability

* Common source configuration

* POUT = 18 W with 16.5dB gain@945 MHz/28 V

* New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band co

PD57018-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

PD57018-E Datasheet (911.62 KB)