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PD57018S - RF POWER TRANSISTORS

Description

The PD57018 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28V in common source mode at frequencies of up to 1GHz.

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Datasheet Details

Part number PD57018S
Manufacturer STMicroelectronics
File Size 360.38 KB
Description RF POWER TRANSISTORS
Datasheet download datasheet PD57018S Datasheet
Additional preview pages of the PD57018S datasheet.

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PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W with 14 dB gain @ 960 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57018 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57018 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57018’s superior linearity performance makes it an ideal solution for base station applications.
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