RF2L15200CB4 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Part number	RF2L15200CB4
Manufacturer	STMicroelectronics
File Size	769.70 KB
Description	RF power LDMOS transistor
Datasheet	RF2L15200CB4 Datasheet
Additional preview pages of the RF2L15200CB4 datasheet.

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz.

Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%.
High efficiency and linear gain operations.
Integrated ESD protection.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

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Published: Mar 19, 2023 |