RF2L15200CB4
RF2L15200CB4 is RF power LDMOS transistor manufactured by STMicroelectronics.
200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor
1 2
Pin connection
Pin
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code
Frequency
POUT
Gain Efficiency
860 MHz
28 V
200 W
17.5 dB
72%
- High efficiency and linear gain operations
- Integrated ESD protection
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In pliance with the european directive 2002/95/EC
Applications
- Broadband mercial munications
- TV broadcast
- Avioncs
-...
