RF2L24280CB4
RF2L24280CB4 is RF Power LDMOS transistor manufactured by STMicroelectronics.
280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor
2 5
3 D4E
Pin connection
Pin
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code
Frequency
POUT
Gain Efficiency
2450 MHz
28 V
280 W
13 dB
60%
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched pair transistors in push-pull configuration
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In pliance with the European directive 2002/95/EC
Applications
- Industrial, scientific and medical
Description...
