STMicroelectronics RF2L24280CB4
The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation.| Part No. | RF2L24280CB4 |
|---|---|
| Datasheet | RF2L24280CB4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 280W 28V RF Power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally matched pair transistors in push-pull configuration
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the European directive 2002/95/EC
APPLICATIONS
● Industrial, scientific and medicalDESCRIPTION
It is qualified up to 32 V operation. Product status link RF2L24280CB4 Product summary Order code RF2L24280CB4 Marking 2L24280 Package D4E Packing Tray Base/bulk quantity 20/100 DS13569 - Rev 3 - September 2021 For further information contact your local STMicroelectronics sales office. RF2L24280CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
