Datasheet4U Logo Datasheet4U.com

RF2L27025CG2 - RF power LDMOS transistor

Datasheet Summary

Description

The RF2L27025CG2 is a 15 W, 28 V, internally matched LDMOS transistor, designed for Telecom, wideband communications and ISM applications in the frequency range from 0.7 to 2.7 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L27025CG2 2700 MHz 28 V 25 W 18 dB 50%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally input matched for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

📥 Download Datasheet

Datasheet preview – RF2L27025CG2

Datasheet Details

Part number RF2L27025CG2
Manufacturer STMicroelectronics
File Size 1.46 MB
Description RF power LDMOS transistor
Datasheet download datasheet RF2L27025CG2 Datasheet
Additional preview pages of the RF2L27025CG2 datasheet.

📁 Similar Datasheet

Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
RF2L27025CG2 Datasheet 25 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency RF2L27025CG2 2700 MHz 28 V 25 W 18 dB 50% • High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC Applications • Telecom and wideband communications • ISM – 915 MHz and 2.45 GHz • 915 MHz / 1.3 and 1.
Published: |