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RF2L15200CB4 - RF power LDMOS transistor

Datasheet Summary

Description

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95/EC.

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Datasheet Details

Part number RF2L15200CB4
Manufacturer STMicroelectronics
File Size 769.70 KB
Description RF power LDMOS transistor
Datasheet download datasheet RF2L15200CB4 Datasheet
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RF2L15200CB4 Datasheet 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72% • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the european directive 2002/95/EC Applications • Broadband commercial communications • TV broadcast • Avioncs • Industrial Description The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.
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