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RF2L15200CB4 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Product status link RF2L15200CB4 Product summary Order code RF2L15200CB4 Marking 2L15200 Package LBB Packing Tape and reel 13" Base/bulk quantity 100/100 DS13389 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L15200CB4 Datasheet 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95/EC.

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