STMicroelectronics RF2L15200CB4
The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats.| Part No. | RF2L15200CB4 |
|---|---|
| Datasheet | RF2L15200CB4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 200W 28V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%● High efficiency and linear gain operations
● Integrated ESD protection
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the european directive 2002/95/EC
APPLICATIONS
● Broadband commercial communications● TV broadcast
● Avioncs
● Industrial
DESCRIPTION
Product status link RF2L15200CB4 Product summary Order code RF2L15200CB4 Marking 2L15200 Package LBB Packing Tape and reel 13" Base/bulk quantity 100/100 DS13389 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office. RF2L15200CB4 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TJ TSTG Table 1. Absolute maximum ratings (TC= 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Maximum junction temperature Storage temperature range Table 2. Thermal data Symbol Parameter RthJC(1) Thermal resistance, junction-to-case 1.
