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RF2L16080CF2 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz.

It can be used in class AB, B or C for all typical modulation formats.

DS13222 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L16080CF2 Datasheet 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 Gate 2 Drain 3 Source (bottom side) Product status link RF2L16080CF2 Product summary Order code.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally input matched for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European Directive 2002/95/EC.

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