RF2L16080CF2 - RF power LDMOS transistor

Datasheet Summary

Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz.

It can be used in class AB, B or C for all typical modulation formats.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally input matched for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European Directive 2002/95/EC.

STMicroelectronics

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Datasheet Details

Part number	RF2L16080CF2
Manufacturer	STMicroelectronics
File Size	1.87 MB
Description	RF power LDMOS transistor
Datasheet	RF2L16080CF2 Datasheet
Additional preview pages of the RF2L16080CF2 datasheet.

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Full PDF Text Transcription

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RF2L16080CF2 Datasheet 80 W, 28 V, 1.3 to 1.

Published: Mar 14, 2023 |