STMicroelectronics RF2L16080CF2
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.| Part No. | RF2L16080CF2 |
|---|---|
| Datasheet | RF2L16080CF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 80W 28V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally input matched for ease of use
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the European Directive 2002/95/EC
APPLICATIONS
● Satellite comms● Telecom
● ISM
DESCRIPTION
DS13222 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office. RF2L16080CF2 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2. Thermal data Symbol Parameter RthJC(1) Thermal resistance, junction-to-case 1. TC=85 °C, TJ= 200 °C, DC test. Symbol HBM CDM Table 3. ESD protection Test methodolo...
