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RF2L16180CB4 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

General Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.

Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.

Product status link RF2L16180CB4 Product summary Order code RF2L16180CB4 Marking 2L16180 Package B4E Packing Tape and reel 13” Base/bulk Quantity 120/120 DS13287 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L16180CB4 Datasheet 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

Key Features

  • Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched for ease of use.
  • Optimized for Doherty.