RF2L16180CB4 Overview
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network. RF2L16180CB4 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table.
RF2L16180CB4 Key Features
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched for ease of use
- Optimized for Doherty
RF2L16180CB4 Applications
- Large positive and negative gate-source voltage range for improved class C
- In pliance with the European Directive 2002/95/EC