RF2L16180CB4 - RF power LDMOS transistor

Datasheet Summary

Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.

Features

Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched for ease of use.
Optimized for Doherty.

STMicroelectronics

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Datasheet Details

Part number	RF2L16180CB4
Manufacturer	STMicroelectronics
File Size	2.43 MB
Description	RF power LDMOS transistor
Datasheet	RF2L16180CB4 Datasheet
Additional preview pages of the RF2L16180CB4 datasheet.

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Full PDF Text Transcription

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RF2L16180CB4 Datasheet 180 W, 28 V, 1.3 to 1.

Published: Mar 14, 2023 |