STMicroelectronics RF2L16180CB4
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.| Part No. | RF2L16180CB4 |
|---|---|
| Datasheet | RF2L16180CB4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 180W 28V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally matched for ease of use
● Optimized for Doherty applications
● Large positive and negative gate-source voltage range for improved class C operation
● In compliance with the European Directive 2002/95/EC
APPLICATIONS
● Multicarrier base station● Industrial, scientific and medical
DESCRIPTION
Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network. Product status link RF2L16180CB4 Product summary Order code RF2L16180CB4 Marking 2L16180 Package B4E Packing Tape and reel 13” Base/bulk Quantity 120/120 DS13287 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office. RF2L16180CB4 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC= 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
