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RF2L16180CF2 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Product status link RF2L16180CF2 Product summary Order code RF2L16180CF2 Marking 2L16180 Package B2 Packing Tape and reel 13" Base/Bulk quantity 120/120 DS13308 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L16180CF2 Datasheet 180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom side) 3.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internal input matching for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95/EC.

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