STMicroelectronics RF2L16180CF2
The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical modulation formats.| Part No. | RF2L16180CF2 |
|---|---|
| Datasheet | RF2L16180CF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 180W 28V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%● High efficiency and linear gain operations
● Integrated ESD protection
● Internal input matching for ease of use
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the european directive 2002/95/EC
APPLICATIONS
● Base stations● L-band radars
● Industrial, scientific and medical (ISM)
DESCRIPTION
Product status link RF2L16180CF2 Product summary Order code RF2L16180CF2 Marking 2L16180 Package B2 Packing Tape and reel 13" Base/Bulk quantity 120/120 DS13308 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office. RF2L16180CF2 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
