RF2L16180CB4 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Datasheet Details

Part number	RF2L16180CB4
Manufacturer	STMicroelectronics
File Size	2.43 MB
Description	RF power LDMOS transistor
Datasheet	RF2L16180CB4 Datasheet
Additional preview pages of the RF2L16180CB4 datasheet.

Product details

Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.

Features

Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched for ease of use.
Optimized for Doherty.

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Published: Mar 14, 2023 |