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RF2L16180CB4 Datasheet, STMicroelectronics

RF2L16180CB4 transistor equivalent, rf power ldmos transistor.

RF2L16180CB4 Avg. rating / M : 1.0 rating-15

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RF2L16180CB4 Datasheet

Features and benefits

Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%
* High efficiency and linear gain operations
* Integrated ESD prot.

Application


* Large positive and negative gate-source voltage range for improved class C operation
* In compliance with the .

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RF2L16180CB4 Page 1 RF2L16180CB4 Page 2 RF2L16180CB4 Page 3

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