RF2L16180CB4
RF2L16180CB4 is RF power LDMOS transistor manufactured by STMicroelectronics.
180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
1 2
5 4 3
B4E
Pin connection
Pin
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code f (MHz)
POUT
Gain
Efficiency
28 V
180 W
14 dB
60%
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched for ease of use
- Optimized for Doherty applications
- Large positive and negative gate-source voltage range for improved class C operation
- In pliance with the European Directive 2002/95/EC
Applications
- Multicarrier base station
- Industrial, scientific and...
