RF2L16180CF2 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Datasheet Details

Part number	RF2L16180CF2
Manufacturer	STMicroelectronics
File Size	494.30 KB
Description	RF power LDMOS transistor
Datasheet	RF2L16180CF2 Datasheet
Additional preview pages of the RF2L16180CF2 datasheet.

Product details

Description

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internal input matching for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

📁 Similar Datasheet

RF2L6S - Super Fast Recovery Diode (Rohm)
RF2001 - SAW Filter (REYCONNS)
RF2001NS2D - Super Fast Recovery Diode (ROHM)
RF2001NS2DFH - Super Fast Recovery Diode (ROHM)
RF2001NS3D - Fast Recovery Diodes (Rohm)
RF2001NS3DFH - Super Fast Recovery Diode (ROHM)
RF2001T2D - Fast Recovery Diode (Rohm)
RF2001T2DFH - Fast Recovery Diode (ROHM)

Other Datasheets by STMicroelectronics

RF2L16180CB4 - RF power LDMOS transistor
RF2L16080CF2 - RF power LDMOS transistor
RF2L15200CB4 - RF power LDMOS transistor
RF2L24280CB4 - RF Power LDMOS transistor
RF2L27015CG2 - RF power LDMOS transistor
RF2L27025CG2 - RF power LDMOS transistor

Published: Mar 14, 2023 |