RF2L16180CF2
RF2L16180CF2 is RF power LDMOS transistor manufactured by STMicroelectronics.
180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor
3 2
B2
Pin connection
Pin
Connection
Gate
Source (bottom side)
Drain
Features
Order code
Frequency
POUT
Gain
Efficiency
1470 MHz
28 V 180 W 17.5 dB
56%
- High efficiency and linear gain operations
- Integrated ESD protection
- Internal input matching for ease of use
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In pliance with the european directive 2002/95/EC
Applications
- Base stations
- L-band radars
- Industrial, scientific and medical (ISM)
Description
The RF2L16180CF2...
