Datasheet4U Logo Datasheet4U.com

RF5L08350CB4 - RF Power LDMOS transistor

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European Directive 2002/95/EC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF50-26S SPST Vacuum Relays JENNINGS
RF500M Radio Modem Campbell Scientific
RF501 Fast recovery Diodes Rohm
RF501B2S Fast Recovery Diode Rohm
RF501BGE2S Super Fast Recovery Diode ROHM

Other Datasheets by STMicroelectronics

Part Number Description
RF5L08600CB4 RF power LDMOS transistor
RF5L051K0CB4 RF power LDMOS transistor
RF5L051K4CB4 RF power LDMOS transistor
RF5L051K5CB4 RF power LDMOS transistor
RF5L052K0CB4 RF power LDMOS transistor

Full PDF Text Transcription

Click to expand full text
RF5L08350CB4 Datasheet 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European Directive 2002/95/EC Applications • Wideband lab amplifier from 0.
Published: |