RF5L08350CB4 Overview
The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz. RF5L08350CB4 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table.
RF5L08350CB4 Key Features
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched for ease of use
- Large positive and negative gate-source voltage range for improved class C
- Excellent thermal stability, low HCI drift
- In pliance with the European Directive 2002/95/EC
RF5L08350CB4 Applications
- Wideband lab amplifier from 0.4 to 1 GHz