RF5L08350CB4 - RF Power LDMOS transistor

STMicroelectronics

RF5L08350CB4 Datasheet Preview — Preview of RF5L08350CB4 PDF

Datasheet Details

Part number	RF5L08350CB4
Manufacturer	STMicroelectronics ↗
File Size	1.15 MB
Description	RF Power LDMOS transistor
Datasheet	RF5L08350CB4-STMicroelectronics.pdf

RF5L08350CB4 Product details

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European Directive 2002/95/EC.

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Published: Mar 19, 2023 |