SCT011H75G3AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT011H75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ.

Datasheet Details

Part number	SCT011H75G3AG
Manufacturer	STMicroelectronics
File Size	390.80 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT011H75G3AG-STMicroelectronics.pdf

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Key Features

Order code SCT011H75G3AG VDS 750 V RDS(on) typ. 11.4 mΩ.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency ID 110 A Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.

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