SCT040H120G3-7 datasheet, mosfet equivalent, STMicroelectronics

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SCT040H120G3-7 Features and benefits

Order code VDS RDS(on) typ. ID SCT040H120G3-7 1200 V 40 mΩ 40 A
* Very fast and robust intrinsic body diode
* Very low RDS(on) over the entire temperat.

SCT040H120G3-7 Application

* Switching mode power supply
* Power supply for renewable energy systems
* DC-DC converters Description .

SCT040H120G3-7 Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.

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