Datasheet Details
| Part number | SCT1000N170 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 300.82 KB |
| Description | Silicon carbide Power MOSFET |
| Datasheet | SCT1000N170-STMicroelectronics.pdf |
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Overview: SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ.
| Part number | SCT1000N170 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 300.82 KB |
| Description | Silicon carbide Power MOSFET |
| Datasheet | SCT1000N170-STMicroelectronics.pdf |
|
|
|
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
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