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SCT1000N170 - Silicon carbide Power MOSFET

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STMicroelectronics

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SCT1000N170 Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCT1000N170

Datasheet Details

Part number	SCT1000N170
Manufacturer	STMicroelectronics
File Size	300.82 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCT1000N170 Datasheet
Additional preview pages of the SCT1000N170 datasheet.

Product details

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

Features

Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Jun 26, 2023 |