SCT1000N170 Key Features
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
- Part: SCT1000N170
- Description: Silicon carbide Power MOSFET
- Manufacturer: STMicroelectronics
- Size: 300.82 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| SCT1000N170AG | Automotive-grade silicon carbide Power MOSFET |
| SCT10N120 | 1200V 12A Silicon carbide Power MOSFET |
| SCT10N120AG | Automotive-grade silicon carbide Power MOSFET |
| SCT011H75G3AG | Automotive-grade silicon carbide Power MOSFET |
| SCT012H90G3AG | Automotive-grade silicon carbide Power MOSFET |