SCT1000N170 Datasheet - STMicroelectronics

Silicon carbide Power MOSFET

SCT1000N170 Features

* Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A

* High speed switching performance

* Very fast and robust intrinsic body diode

* Low capacitances

* Very high operating junction temperature capability (TJ = 200 °C) Applications

* Auxiliary

SCT1000N170 General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia.

SCT1000N170 Datasheet (300.82 KB)

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Datasheet Details

Part number:

SCT1000N170

Manufacturer:

STMicroelectronics ↗

File Size:

300.82 KB

Description:

Silicon carbide power mosfet.
SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen.

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SCT1000N170 Silicon carbide Power MOSFET STMicroelectronics

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SCT1000N170 Features

SCT1000N170 General Description

Datasheet Details

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