STMicroelectronics SCT1000N170AG
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCT1000N170AG |
|---|---|
| Datasheet | SCT1000N170AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1● AEC-Q101 rev. C qualified
● Very fast and robust intrinsic body diode
● Low capacitances
● Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB)
APPLICATIONS
● Main inverter (electric traction)● DC/DC converter for EV/HEV
● On board charger (OBC) G(1) S(3) AM01475v1_noZen
DESCRIPTION
The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT1000N170AG Product summary Order code SCT1000N170AG Marking SCT1000N170AG Package HiP247 Packing Tube DS13357 - Rev 5 - June 2021 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute max...
