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SCT1000N170AG - Automotive-grade silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

Key Features

  • Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1.
  • AEC-Q101 rev. C qualified.
  • Very fast and robust intrinsic body diode.
  • Low capacitances.
  • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB).

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SCT1000N170AG Datasheet Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package Features Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1 • AEC-Q101 rev. C qualified • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.